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Electrical Characteristics
T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to
25°C
V DS = 60 V, V GS = 0 V
V DS = 48 V, T C = 150°C
V GS = 25 V, V DS = 0 V
V GS = -25 V, V DS = 0 V
60
--
--
--
--
--
--
0.06
--
--
--
--
--
--
1
10
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 1.4 A
2.0
--
--
0.11
4.0
0.14
V
?
g FS
Forward Transconductance
V DS = 25 V, I D = 1.4 A
(Note 4)
--
3.0
--
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
240
90
15
310
120
20
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 30 V, I D = 6.5 A,
R G = 25 ?
V DS = 48 V, I D = 13 A,
V GS = 10 V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
5
25
8
15
5.8
2.0
2.5
20
60
25
40
7.5
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
2.8
11.2
A
A
V SD
t rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V GS = 0 V, I S = 2.8 A
V GS = 0 V, I S = 13 A,
--
--
--
39
1.5
--
V
ns
Q rr
Reverse Recovery Charge
dI F / dt = 100 A/ μ s
(Note 4)
--
40
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 12.6mH, I AS = 2.8A, V DD = 25V, R G = 25 ?, Starting T J = 25°C
3. I SD ≤ 13A, di/dt ≤ 300A/us, V DD ≤ BV DSS, Starting T J = 25°C
4. Pulse Test : Pulse width ≤ 300 μ s, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
?20 0 2 Fairchild Semiconductor Corporation
FQ T13N06 Rev. C0
www.fairchildsemi.com
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